| PART |
Description |
Maker |
| MF1043S-1 |
FOR GSM MOBILE TELEPHONE / Rx
FOR GSM MOBILE TELEPHONE, Rx
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MF1090S-1 |
FOR E-GSM MOBILE TELEPHONE, Rx
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CGY60 Q62702G-39 |
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems)
From old datasheet system
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems) 砷化镓微波单片集成电路（低移动通信PCN中的DECT，在2.7VV系统GSM噪声前置放大器）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF5S9080NBR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| AP137-501 |
Quad-Band GSM Power Amplifier Module
|
Skyworks Solutions Inc.
|
| AWT6155 AWT6155RM37P8 AWT6155RM37P9 |
Quad-band GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| TQM7M5008 |
Quad-Band GSM/EDGE Polar Power Amplifier Module
|
TriQuint Semiconductor
|
| PF01410 PF01410A |
MOS FET Power Amplifier Module for GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| RF3108_06 RF3108 RF3108PCBA-41X RF310806 |
TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE
|
RFMD[RF Micro Devices]
|
| MMM6025 |
Quad-Band GSM/GPRS Power Amplifier Front-End Module
|
Freescale Semiconductor
|
| TQM7M5013 |
Quad-Band GSM / GPRS / EDGE-Linear Power Amplifier Module
|
TriQuint Semiconductor
|
